Volume 28, Number 1, January - February - March 2017

Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET

Lower conduction loss and fast switching characteristics for power devices are increasingly required in the more and more energy-conscious world ...



Using TCAD to Reverse Engineer a 2N2222 BJT for Proton Damage Simulations

It is often the case, that an Engineer is required to simulate environmental effects on a device manufactured by a third party ...


Optimization of PD-SOI CMOS Process and Devices for RF Applications

In recent years, radio-frequency (RF) CMOS on Silicon-on-Insulator (SOI) has rapidly evolved as a mainstream technology for switches used in wireless applications ...