DOWNLOADS | CONTACT US
USA Japan China Korea
TCAD
Analog / AMS / RF
Custom IC CAD
Interconnect Modeling
Digital CAD
다운로드 및 기술지원
라이센스
PDK Design Flows
Technical Library
Services
Corporate


VICTORY Process
Full Physical 3D Semiconductor Simulator
9.1MB


VICTORY 3D Process Simulation
Modeling of Deep Reactive Ion Etching
584KB


Token-Based Licensing MultiCore Licensing

VICTORY Process and its Competitors

Synopsys Sentaurus Process, T-SUPREMIV (SUPREM4), Coventor SEMulator3D (SEM)

VICTORY Process is comprehensive full flow 3D process simulator that is a suitable replacement for Synopsys Sentaurus Process, T-SUPREMIV (SUPREM4) and Coventor SEMulator3D (SEM). The main advantage of VICTORY Process is its capability to perform physically based simulation of ALL semiconductor technology process steps.

VICTORY Process comes complete with a set of internally developed models and with an Open Modeling Interface. Using this interface, third party models can be easily integrated, making Victory Process highly suited for both industry and academic applications. VICTORY Process seamlessly integrates with Silvaco Technology CAD (TCAD) interactive tools and Virtual Wafer Fab (VWF).

VICTORY Process provides fast and accurate simulation of all critical fabrication steps used in modern semiconductor technologies including:

  • CMOS down to 22nm technology node
  • Multiple Gate FETs (MuGFETS): FinFET, FlexFET, Gate-all- around (GAA) FETs, etc
  • MEMS

The main advantages of VICTORY Process are:

  • Sophisticated, multi-particle and flux models for physical deposition and etching with substrate material redeposition
  • Advanced models for Ion Milling (IM) and Ion Beam Deposition (IBD)
  • Extremely accurate and fast Monte Carlo implant simulation
  • 3D physical oxidation simulation with stress analysis

Other important features include:

  • Comprehensive set of 3D diffusion models: Fermi, three-stream, and five-stream
  • Models for Reactive Ion Etching (RIE), Chemical Vapor Deposition (CVD), Plasma etching etc.
  • Layout driven processing either using GDS2 layouts or internal mask polygon specifications
  • Efficient multi-threading of time critical operations of Monte Carlo implantation, diffusion, oxidation, and physical etching and deposition
  • Seamless link to 3D device simulators including structure mirroring, adaptive doping refinement and electrode specification

Synopsys Sentaurus Process, T-SUPREMIV (SUPREM4) and Coventor SEMulator3D (SEM) are the trademarks of their respective owners.

Copyright © 1984 - SILVACO, Inc. - 상표 정책 - 개인정보 보호